According to our (Global Info Research) latest study, the global IGBT Power Device market size was valued at US$ 10643 million in 2025 and is forecast to a readjusted size of US$ 18464 million by 2032 with a CAGR of 8.5% during review period.
An IGBT power device (Insulated-Gate Bipolar Transistor) is a MOS-gated, bipolar-conduction power semiconductor switch used to control medium-to-high power with relatively simple gate driving and strong current-handling capability. In products, “IGBT power device” usually covers multiple deliverable forms: discrete IGBTs (often co-packaged with an anti-parallel diode in TO-247/TO-263-class packages), multi-chip IGBT power modules (half-bridge/six-pack/three-level building blocks), and press-pack IGBTs for very high-power series-stacked converter valves. Infineon’s 600 V/1200 V TRENCHSTOP™ series is a representative discrete IGBT technology family combining trench and field-stop concepts, and it explicitly targets mainstream applications like motor control, UPS, HVAC, and photovoltaic conversion. For grid-class series connection and redundancy-oriented stacks, Hitachi Energy explains that press-packs are preferred for ease of series connection and their ability to conduct in the shorted state, and it describes StakPak as high-power IGBT press-packs designed to ensure uniform chip pressure in multi-device stacks.
From an industry status and application perspective, IGBTs remain a mature, high-volume backbone of global power electronics—especially where cost-per-kW, ruggedness, and proven field reliability dominate the system decision. Typical high-usage end systems include variable-speed motor drives, UPS, solar inverters, and motor drive/industrial inverter power stages, and onsemi’s application note explicitly discusses half-bridge usage in UPS, solar inverters and motor drives. In parallel, the “energy transition” continues to expand the installed base of inverterized equipment: the IEA forecasts global annual renewable capacity additions at 666 GW in 2024 (main case) and rising thereafter, which mechanically increases demand for grid-connected power conversion hardware where IGBTs are still widely deployed. On the high-voltage side, leading suppliers continue to refresh HVIGBT device platforms for rail and heavy industrial inverters—e.g., Mitsubishi Electric announced new 4.5 kV / 1,200 A HVIGBT modules aimed at efficient, reliable inverters for railcars and large industrial equipment, underscoring that IGBT-based solutions remain central in harsh-environment, long-life applications. The supply chain is broadly “silicon-centric”: upstream includes silicon wafers and front-end device manufacturing; midstream includes back-end assembly/test into discrete packages and modules (plus reliability qualification); downstream spans OEMs of drives/inverters, renewable energy equipment, traction and grid systems.
Looking forward, the technology roadmap is shaped by loss reduction + higher robustness + higher power density + reliability in harsher operating environments, while the market narrative is “IGBT holds the scale segments; SiC grows into the premium-efficiency segments.” Device-level innovation continues around trench + field-stop architectures and diode co-optimization (Infineon highlights trench top-cell + field-stop and soft-recovery diode concepts to improve static/dynamic performance and reduce turn-on losses). Discrete product lines also keep pushing higher operating temperature and tighter parameter control; for example, ST describes its trench-gate field-stop 1200 V M-series IGBTs as balancing inverter performance and efficiency (with short-circuit functionality), typical of modern industrial-grade discrete offerings. Demand drivers remain strong: the IEA reports global electric car sales topped 17 million in 2024, sustaining a very large traction-inverter market even as device mix evolves. Competitively, the landscape is led by diversified global power semiconductor IDMs and platform-scale manufacturers, while specialized suppliers defend niches such as HV press-pack; Infineon states it is the “clear #1 in power semiconductors”, illustrating the role of scale, portfolio breadth, and manufacturing footprint in competitive advantage.
This report is a detailed and comprehensive analysis for global IGBT Power Device market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global IGBT Power Device market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global IGBT Power Device market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global IGBT Power Device market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global IGBT Power Device market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2021-2026
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for IGBT Power Device
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global IGBT Power Device market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, Mitsubishi Electric, Fuji Electric, Zhuzhou CRRC Times Electric, BYD Semiconductor, Semikron Danfoss, StarPower, onsemi, Denso, Hangzhou Silan Microelectronics, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
IGBT Power Device market is split by Type and by Application. For the period 2021-2032, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
IGBT Module
IGBT Discrete
Press-pack IGBT
Market segment by Voltage
High Voltage IGBT
Medium Voltage IGBT
Low Voltage IGBT
Market segment by Application
Automotive
Industrial Motors
Home Appliances
Wind Power/PV/Energy Storage/Power Grid
Rail Transit
UPS/Data Center/Communication
Aviation and Military
Others
Major players covered
Infineon
Mitsubishi Electric
Fuji Electric
Zhuzhou CRRC Times Electric
BYD Semiconductor
Semikron Danfoss
StarPower
onsemi
Denso
Hangzhou Silan Microelectronics
Bosch
MacMic Science & Technolog
United Nova Technology (UNT)
Toshiba
Hitachi Energy
ZhiXin Semiconductor
Littelfuse
Minebea Power Semiconductor Device
NJSM Electronics
Vishay Intertechnology
China Resources Microelectronics Limited
Microchip (Microsemi)
STMicroelectronics
GeePak
Archimedes Semiconductor (Hefei)
Hefei Cpower Technology
Grecon Semiconductor (Shanghai)
SanRex
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe IGBT Power Device product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of IGBT Power Device, with price, sales quantity, revenue, and global market share of IGBT Power Device from 2021 to 2026.
Chapter 3, the IGBT Power Device competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the IGBT Power Device breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2021 to 2026.and IGBT Power Device market forecast, by regions, by Type, and by Application, with sales and revenue, from 2027 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of IGBT Power Device.
Chapter 14 and 15, to describe IGBT Power Device sales channel, distributors, customers, research findings and conclusion.
Summary:
Get latest Market Research Reports on IGBT Power Device. Industry analysis & Market Report on IGBT Power Device is a syndicated market report, published as Global IGBT Power Device Market 2026 by Manufacturers, Regions, Type and Application, Forecast to 2032. It is complete Research Study and Industry Analysis of IGBT Power Device market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.