According to our (Global Info Research) latest study, the global RF GaN Transistors market size was valued at US$ 2025 million in 2024 and is forecast to a readjusted size of USD 6376 million by 2031 with a CAGR of 18.0% during review period.
Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications.
Compared to traditional technologies, gallium nitride has proven to be a superior material for several applications in the radio frequency field, where reliability, efficiency and reduced absorption are essential requirements. During the manufacturing process, gallium nitride is usually grown, at temperatures above 1000 °C, on a substrate composed of silicon carbide (SiC) in the case of RF applications, or of regular silicon in the case of power applications. Technology based on GaN-on-SiC is by far the most used, both because it combines the high-power density of gallium nitride with the low power losses of silicon carbide, and because it solves the issues related to thermal management and parasitic losses. GaN-on-Si technology, despite having a lower cost, entails worse thermal performances and higher losses of RF signal power.
Currently GaN RF devices are currently in a dominant position, accounting for about 85% of the market share, while GaN power devices currently account for the remaining 15%. GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years.
At present, GaN RF devices are mainly dominated by several companies such as Sumitomo Electric Device Innovations (SEDI), Wolfspeed, Qorvo and NXP; while GaN power devices are dominated by Power Integrations, Inc., Navitas Semiconductor, GaN Systems, Efficient Power Conversion Corporation (EPC), Innoscience, Transphorm Inc. and Infineon, among which Innoscience is the world's largest GaN power device manufacturer.
This report is a detailed and comprehensive analysis for global RF GaN Transistors market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global RF GaN Transistors market size and forecasts, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global RF GaN Transistors market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global RF GaN Transistors market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global RF GaN Transistors market shares of main players, shipments in revenue ($ Million), sales quantity (K Pcs), and ASP (US$/Pcs), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for RF GaN Transistors
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global RF GaN Transistors market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Sumitomo Electric Device Innovations (SEDI), MACOM (OMMIC), Qorvo, NXP Semiconductors, Mitsubishi Electric, RFHIC Corporation, Infineon, Microchip Technology, Toshiba, Altum RF, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
RF GaN Transistors market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
GaN RF Amplifier
GaN Low Noise Amplifiers
GaN Switches
GaN MMICs
Market segment by Application
Telecom Infrastructure
Satellite
Military, Defense & Aerospace
Others
Major players covered
Sumitomo Electric Device Innovations (SEDI)
MACOM (OMMIC)
Qorvo
NXP Semiconductors
Mitsubishi Electric
RFHIC Corporation
Infineon
Microchip Technology
Toshiba
Altum RF
ReliaSat (Arralis)
Skyworks
SweGaN
Analog Devices Inc
Aethercomm
Integra Technologies
Mercury Systems
Epistar Corp.
Ampleon
CETC 13
CETC 55
Dynax Semiconductor
Sanan Optoelectronics
Youjia Technology (Suzhou) Co., Ltd
Shenzhen Taigao Technology
Tagore Technology
WAVICE Inc
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe RF GaN Transistors product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of RF GaN Transistors, with price, sales quantity, revenue, and global market share of RF GaN Transistors from 2020 to 2025.
Chapter 3, the RF GaN Transistors competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the RF GaN Transistors breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and RF GaN Transistors market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of RF GaN Transistors.
Chapter 14 and 15, to describe RF GaN Transistors sales channel, distributors, customers, research findings and conclusion.
Summary:
Get latest Market Research Reports on RF GaN Transistors. Industry analysis & Market Report on RF GaN Transistors is a syndicated market report, published as Global RF GaN Transistors Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031. It is complete Research Study and Industry Analysis of RF GaN Transistors market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.