According to our (Global Info Research) latest study, the global Power Electronic Devices market size was valued at US$ 30760 million in 2025 and is forecast to a readjusted size of US$ 45450 million by 2032 with a CAGR of 5.8% during review period.
Power Electronic Devices are the core of power electronics technology, defined as high-voltage, high-current semiconductor components used to perform electrical energy conversion (e.g., AC-DC, DC-DC, DC-AC), control, and management. Unlike integrated circuits that process information, the primary function of power devices is to handle energy efficiently and reliably. Major product types have traditionally been dominated by Silicon-based (Si) devices, including Power Diodes, Thyristors, Power MOSFETs, and Insulated Gate Bipolar Transistors (IGBTs). However, the industry is undergoing a profound shift toward new devices based on Wide-Bandgap (WBG) semiconductor materials, principally Silicon Carbide (SiC) and Gallium Nitride (GaN). SiC and GaN devices are favored for their higher switching frequencies, lower energy losses, and superior high-temperature tolerance. Major application areas have expanded from traditional industrial motor drives and consumer electronics power supplies to the fastest-growing sectors today: New Energy Vehicles (main inverters for EV/HEV, On-Board Chargers/OBCs, DC-DC converters), Renewable Energy (photovoltaic inverters, wind turbine converters), Data Centers (high-efficiency Power Supply Units/PSUs), and 5G Communications (base station power supplies).
The value chain for the power electronics industry is characterized by distinct barriers. The Upstream consists of the supply of critical raw materials and equipment, including the manufacturing of substrates (Silicon, SiC, GaN-on-Si/SiC, etc.) and epitaxial wafers (represented by firms like Wolfspeed, Coherent, Sumitomo Electric), as well as specialized process equipment (e.g., MOCVD, high-temperature ion implanters). The Midstream involves device design, fabrication, and packaging. This segment is dominated by IDMs (Integrated Device Manufacturers), as power device manufacturing requires unique process technologies (e.g., deep trenching, backside thinning) that differ significantly from standard CMOS logic processes. Global leaders include Infineon Technologies, ON Semiconductor, STMicroelectronics, Mitsubishi Electric, and Fuji Electric. Concurrently, a new wave of WBG-focused Fabless (e.g., Navitas, GaN Systems) and Foundries (e.g., X-Fab, VIS) is emerging. The Downstream comprises system integrators and end-product manufacturers who integrate these power devices (or modules) into final applications, such as automotive manufacturers (Tesla, BYD, Volkswagen), industrial automation giants (Siemens, ABB), server vendors (HPE, Dell), etc.
Currently, the global power electronics industry is in the midst of a critical structural transition. While traditional Silicon-based IGBTs and MOSFETs still dominate the market in terms of total revenue—owing to their mature supply chains and cost advantages (especially in low-to-mid voltage industrial and consumer segments)—their performance is approaching physical limits. The industry's current status is defined by the accelerating Wide-Bandgap (WBG) revolution led by SiC and GaN. SiC has established dominance in high-end EV main inverters (particularly for 800V platforms) and high-voltage industrial applications. Leading IDMs (like Infineon, ST, Wolfspeed, ON Semi) are aggressively expanding 8-inch (200mm) SiC wafer fab capacity to meet surging demand and drive down costs. GaN, leveraging its ultra-high switching frequency, has achieved a commercial breakthrough in consumer electronics (fast chargers) and is rapidly penetrating data center power supplies and low-to-mid voltage automotive applications (like OBCs). The market dynamic has shifted from "if" WBG will be adopted to "how fast" it can be implemented, making supply chain stability and Long-Term Agreements (LTAs) central to the competitive landscape.
Looking ahead, the future trends for the power electronics industry will revolve around efficiency, power density, and integration. 1. SiC Cost Optimization and Penetration: 8-inch (200mm) wafers will become the manufacturing mainstream for SiC, significantly reducing per-die cost and driving SiC adoption from premium EVs into mainstream models and broader industrial sectors. 2. GaN Integration and High-Frequency: GaN technology will move beyond discrete devices toward "GaN ICs"—integrating drivers and controllers onto the same chip (System-in-Package or System-on-Chip)—to achieve superior power density in consumer electronics and data centers. 3. Advanced Packaging: Traditional wire bonding will be replaced by double-sided cooling, copper-clip bonding, and embedded die technologies to fully exploit the high-temperature and high-frequency capabilities of WBG devices. The industry's core driving factors are the urgent global demands for "Energy Efficiency" and "Electrification": 1. Automotive Electrification: This is the most powerful driver. The pursuit of longer range and faster charging in EVs creates rigid demand for SiC main inverters and GaN on-board chargers. 2. Renewable Energy and Storage: "Carbon Neutral" goals require higher conversion efficiency in solar and wind systems, coupled with efficient energy storage systems to stabilize the grid. 3. AI and Data Centers: The explosion in AI computing power is causing data center energy consumption to soar; adopting high-efficiency GaN and SiC PSUs is critical to reducing Total Cost of Ownership (TCO) and enabling green computing.
This report is a detailed and comprehensive analysis for global Power Electronic Devices market. Both quantitative and qualitative analyses are presented by company, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Power Electronic Devices market size and forecasts, in consumption value ($ Million), 2021-2032
Global Power Electronic Devices market size and forecasts by region and country, in consumption value ($ Million), 2021-2032
Global Power Electronic Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), 2021-2032
Global Power Electronic Devices market shares of main players, in revenue ($ Million), 2021-2026
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Power Electronic Devices
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Power Electronic Devices market based on the following parameters - company overview, revenue, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include STMicroelectronics, Infineon (GaN Systems), Wolfspeed, Rohm, onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric, Semikron Danfoss, Fuji Electric, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market segmentation
Power Electronic Devices market is split by Type and by Application. For the period 2021-2032, the growth among segments provides accurate calculations and forecasts for Consumption Value by Type and by Application. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Si-Based MOSFET Discrete
SiC MOSFET Discretes
IGBT Discrete
IGBT Module
SiC MOSFET Module
Si-Based Diode
SiC Diode
GaN Power Devices
Thyristors
Bipolar Junction Transistors (BJT)
IPM
Others
Market segment by Material
Si-Based Semiconductor Device
SiC Power Device
GaN Power Device
Market segment by Device Voltage
600V
1200V
200V
100V
40V
1700V
3300V
Others
Market segment by Company Type
IDM
Fabless
Market segment by Application
Automotive & Mobility
Industrial Motor/Drive
PV, Energy Storage, Wind Power
Grid and Energy
UPS, Data Center & Server
Rail Transport
Consumer Electronics
Defence & Aerospace
Others
Market segment by players, this report covers
STMicroelectronics
Infineon (GaN Systems)
Wolfspeed
Rohm
onsemi
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric
Semikron Danfoss
Fuji Electric
Navitas Semiconductor
Toshiba
San'an Optoelectronics
Littelfuse
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
SanRex
Alpha & Omega Semiconductor
Bosch
Power Integrations, Inc.
Efficient Power Conversion Corporation (EPC)
Innoscience
Sanken Electric
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
StarPower
Yangzhou Yangjie Electronic Technology
Guangdong AccoPower Semiconductor
Changzhou Galaxy Century Microelectronics
Hangzhou Silan Microelectronics
MacMic Science & Technology
Jiangsu Jiejie Microelectronics
NCEPOWER
PN Junction Semiconductor (Hangzhou)
United Nova Technology (UNT)
InventChip Technology (IVCT)
Leadrive Technology
HAIMOSIC (SHANGHAI)
Suzhou Sko Semiconductor
Shenzhen Aishite Technology
Suzhou Xizhi Technology
Archimedes Semiconductor (Hefei)
Grecon Semiconductor (Shanghai)
Hebei Sinopack Electronic Technology
ZhiXin Semiconductor
Market segment by regions, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, UK, Russia, Italy and Rest of Europe)
Asia-Pacific (China, Japan, South Korea, India, Southeast Asia and Rest of Asia-Pacific)
South America (Brazil, Rest of South America)
Middle East & Africa (Turkey, Saudi Arabia, UAE, Rest of Middle East & Africa)
The content of the study subjects, includes a total of 13 chapters:
Chapter 1, to describe Power Electronic Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top players of Power Electronic Devices, with revenue, gross margin, and global market share of Power Electronic Devices from 2021 to 2026.
Chapter 3, the Power Electronic Devices competitive situation, revenue, and global market share of top players are analyzed emphatically by landscape contrast.
Chapter 4 and 5, to segment the market size by Type and by Application, with consumption value and growth rate by Type, by Application, from 2021 to 2032.
Chapter 6, 7, 8, 9, and 10, to break the market size data at the country level, with revenue and market share for key countries in the world, from 2021 to 2026.and Power Electronic Devices market forecast, by regions, by Type and by Application, with consumption value, from 2027 to 2032.
Chapter 11, market dynamics, drivers, restraints, trends, Porters Five Forces analysis.
Chapter 12, the key raw materials and key suppliers, and industry chain of Power Electronic Devices.
Chapter 13, to describe Power Electronic Devices research findings and conclusion.
Summary:
Get latest Market Research Reports on Power Electronic Devices. Industry analysis & Market Report on Power Electronic Devices is a syndicated market report, published as Global Power Electronic Devices Market 2026 by Company, Regions, Type and Application, Forecast to 2032. It is complete Research Study and Industry Analysis of Power Electronic Devices market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.