According to our (Global Info Research) latest study, the global High-end Power Devices market size was valued at US$ 32820 million in 2025 and is forecast to a readjusted size of US$ 58450 million by 2032 with a CAGR of 8.7% during review period.
High-end power devices are mainly IGBTs and MOSFETs, which are divided into discrete devices and modules. Among them, MOSFET can be divided into Si MOSFET and SiC MOSFET, but currently the mainstream is still Si MOSFET.
SiC MOSFET mainly includes 650V, 750V, 900V, 1200V, 1700V and 3300V SiC Module. The core manufacturers are mainly used in the field of electric vehicles. Currently, the world"s major manufacturers of SiC modules include STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD, Microchip (Microsemi), Mitsubishi Electric and Semikron Danfoss. The top3 producers in the world account for approximately 70% of the market share.
The main products of SiC MOSFET discrete devices include 650V, 750V, 900V, 1200V and 1700V.
Currently, the world"s major SiC MOSFET discrete devices manufacturers include Law Semiconductor, Infineon, Wolfspeed and Rohm. The top five manufacturers account for about 80% of the market share.
The current global market is basically dominated by manufacturers in Europe, the United States and Japan. The leading global silicon carbide power device manufacturers mainly include STMicroelectronics, Infineon, Wolfspeed and Rohm, etc. The Top 3 occupy approximately 64% of the global market share.
For example, the main model of STMicroelectronics" SiC MOSFET module is ACEPACK DRIVE (ADP series), which is mainly used for main inverters. The main model of Infineon"s SiC MOSFET module is CoolSIC, which can be used in charging piles, UPS, etc.
This report is a detailed and comprehensive analysis for global High-end Power Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global High-end Power Devices market size and forecasts, in consumption value ($ Million), sales quantity (M Units), and average selling prices (USD/Unit), 2021-2032
Global High-end Power Devices market size and forecasts by region and country, in consumption value ($ Million), sales quantity (M Units), and average selling prices (USD/Unit), 2021-2032
Global High-end Power Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (M Units), and average selling prices (USD/Unit), 2021-2032
Global High-end Power Devices market shares of main players, shipments in revenue ($ Million), sales quantity (M Units), and ASP (USD/Unit), 2021-2026
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for High-end Power Devices
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global High-end Power Devices market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, Mitsubishi Electric (Vincotech), Fuji Electric, Semikron Danfoss, Hitachi Power Semiconductor Device, Bosch, onsemi, Toshiba, Littelfuse (IXYS), Microchip (Microsemi), etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
High-end Power Devices market is split by Type and by Application. For the period 2021-2032, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
IGBT Discrete
IGBT Module
MOSFET Discrete
MOSFET Module
Market segment by Application
NEV
Charging Pile
Industrial Control
PV, Energy Storage and Wind
UPS, Data Centers and Servers
Rail Transit
Others
Major players covered
Infineon
Mitsubishi Electric (Vincotech)
Fuji Electric
Semikron Danfoss
Hitachi Power Semiconductor Device
Bosch
onsemi
Toshiba
Littelfuse (IXYS)
Microchip (Microsemi)
STMicroelectronics
Vishay
Denso
SanRex Corporation
Cissoid
StarPower Semiconductor
BYD Semiconductor
Zhuzhou CRRC Times Electric
Hangzhou Silan Microelectronics
MacMic Science & Technology
China Resources Microelectronics Limited
Yangzhou Yangjie Electronic Technology
EcoSemitek
CETC-55
Shenzhen BASiC Semiconductor
SemiQ
Alpha & Omega Semiconductor
GE Aerospace
Wolfspeed
Rohm
Navitas (GeneSiC)
Wuxi NCE Power
Shanghai Super Semiconductor
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe High-end Power Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of High-end Power Devices, with price, sales quantity, revenue, and global market share of High-end Power Devices from 2021 to 2026.
Chapter 3, the High-end Power Devices competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the High-end Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2021 to 2026.and High-end Power Devices market forecast, by regions, by Type, and by Application, with sales and revenue, from 2027 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of High-end Power Devices.
Chapter 14 and 15, to describe High-end Power Devices sales channel, distributors, customers, research findings and conclusion.
Summary:
Get latest Market Research Reports on High-end Power Devices. Industry analysis & Market Report on High-end Power Devices is a syndicated market report, published as Global High-end Power Devices Market 2026 by Manufacturers, Regions, Type and Application, Forecast to 2032. It is complete Research Study and Industry Analysis of High-end Power Devices market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.