According to our (Global Info Research) latest study, the global Gate Driver ICs for GaN HEMTs market size was valued at US$ 22.7 million in 2024 and is forecast to a readjusted size of USD 56.5 million by 2031 with a CAGR of 13.1% during review period.
Gallium Nitride FET-based power conversion systems offer higher efficiency, increased power density, and lower overall system cost than silicon based alternatives. These advantageous characteristics have spurred the presence of an ever increasing ecosystem of power electronics components such as gate drivers, controllers, and passive components that specifically enhance eGaN FET performance.
Currently GaN RF devices are currently in a dominant position, accounting for about 85% of the market share, while GaN power devices currently account for the remaining 15%. GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years.
At present, GaN RF devices are mainly dominated by several companies such as Sumitomo Electric Device Innovations (SEDI), Wolfspeed, Qorvo and NXP; while GaN power devices are dominated by Power Integrations, Inc., Navitas Semiconductor, GaN Systems, Efficient Power Conversion Corporation (EPC), Innoscience, Transphorm Inc. and Infineon, among which Innoscience is the world's largest GaN power device manufacturer.
This report is a detailed and comprehensive analysis for global Gate Driver ICs for GaN HEMTs market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Gate Driver ICs for GaN HEMTs market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global Gate Driver ICs for GaN HEMTs market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global Gate Driver ICs for GaN HEMTs market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global Gate Driver ICs for GaN HEMTs market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Gate Driver ICs for GaN HEMTs
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Gate Driver ICs for GaN HEMTs market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon Technologies AG, Texas Instruments, STMicroelectronics, Rohm, uPI Semiconductor, Onsemi, Monolithic Power Systems (MPS), Analog Devices, Inc. (ADI), Renesas, Chengdu danXi Technology, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Gate Driver ICs for GaN HEMTs market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Gate Driver ICs for GaN SG HEMTs
Gate Driver ICs for GaN GIT HEMTs
Market segment by Application
Industrial
Telecom
Data Center
Others
Major players covered
Infineon Technologies AG
Texas Instruments
STMicroelectronics
Rohm
uPI Semiconductor
Onsemi
Monolithic Power Systems (MPS)
Analog Devices, Inc. (ADI)
Renesas
Chengdu danXi Technology
Innoscience
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Gate Driver ICs for GaN HEMTs product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Gate Driver ICs for GaN HEMTs, with price, sales quantity, revenue, and global market share of Gate Driver ICs for GaN HEMTs from 2020 to 2025.
Chapter 3, the Gate Driver ICs for GaN HEMTs competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Gate Driver ICs for GaN HEMTs breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Gate Driver ICs for GaN HEMTs market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Gate Driver ICs for GaN HEMTs.
Chapter 14 and 15, to describe Gate Driver ICs for GaN HEMTs sales channel, distributors, customers, research findings and conclusion.
Summary:
Get latest Market Research Reports on Gate Driver ICs for GaN HEMTs. Industry analysis & Market Report on Gate Driver ICs for GaN HEMTs is a syndicated market report, published as Global Gate Driver ICs for GaN HEMTs Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031. It is complete Research Study and Industry Analysis of Gate Driver ICs for GaN HEMTs market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.